Document Type

Patent

Publication Date

4-26-2016

Patent Number

9324565

CPC

H01L 29/408 (20130101)

Abstract

In one embodiment, a method for fabricating thin film tunnel devices includes forming multiple bottom electrodes on a substrate, depositing an insulating layer of material on top of each bottom electrode, and directly depositing a single, continuous top layer of conductive material on the insulating layers that does not contact the bottom electrodes, wherein the bottom electrodes, insulating layers, and continuous top layer together form multiple thin film tunnel devices in which the continuous top layer forms the top electrode for each tunnel device and electrically connects the tunnel devices.

Application Number

14/803,380

Assignees

University of South Florida

Filing Date

2015-07-20

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