Document Type
Patent
Publication Date
November 2010
Patent Number
7829409
Abstract
In accordance with the present invention, a novel method to fabricate topological capacitors is provided. The fabrication method of the instant invention is based upon a reversed surface topology utilizing deep reactive ion etching to establish conductive capacitive elements and non-conductive capacitive element groups.
Application Number
11/679,580
Recommended Citation
Onishi, Shinzo and Langebrake, Lawrence C., "Method of manufacturing silicon topological capacitors" (2010). USF Patents. 534.
https://digitalcommons.usf.edu/usf_patents/534
Assignees
University of South Florida
Filing Date
02/27/2007
Primary/U.S. Class
438/239
COinS
