Document Type
Patent
Publication Date
August 2011
Patent Number
7992425
Abstract
A novel, resistance-based porous silicon sensor with Pd nano structures as the hydrogen sensing layer is presented. The sensor operates at room temperature. The hydrogen sensor of the present includes a p-Type Si substrate that is subjected to porous Si etching to form a nanoporous substrate. The substrate is then coated with a thin layer of Pd and annealed at 900 degrees C. This results in some Pd getting oxidized on porous Si and a thin PdO layer forms on the surface of the substrate. The sensor in accordance with the present invention exhibits an inverse relationship between increased hydrogen concentration versus resistance.
Application Number
11/467,341
Recommended Citation
Luongo, Kevin and Bhansali, Shekhar, "Hydrogen sensor" (2011). USF Patents. 418.
https://digitalcommons.usf.edu/usf_patents/418
Assignees
University of South Florida
Filing Date
08/25/2006
Primary/U.S. Class
73/106
