Document Type
Patent
Publication Date
July 2012
Patent Number
8211400
Abstract
The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136−yGey, where y indicates the number of Ge atoms present in the main framework and 136−y indicates the number of Si atoms present in the main framework, and wherein y>0.
Application Number
12/428,822
Recommended Citation
Nolas, George S.; Witanachchi, Sarath; and Mukherjee, Pritish, "Method of manufacturing a clathrate compound" (2012). USF Patents. 335.
https://digitalcommons.usf.edu/usf_patents/335
Assignees
University of South Florida
Filing Date
04/23/2009
Primary/U.S. Class
423/592
