Noncontact determination of interface trap density for semiconductor-dielectric interface structures
Document Type
Patent
Publication Date
August 2014
Patent Number
8803533
CPC
G01R 31/2648(20130101), G01R 31/2831(20130101), H01L 22/14(20130101)
Abstract
Embodiments of the subject method and apparatus relate to a sequence of noncontact Corona-Kelvin Metrology that allows the determination and monitoring of interface properties in dielectric/wide band gap semiconductor structures. The technique involves the incremental application of precise and measured quantities of corona charge, QC, onto the dielectric surface followed by determination of the contact potential difference, VCPD, as the material structure response. The V-Q characteristics obtained are used to extract the surface barrier, VSB, response related to the applied corona charge. An intersection of the VCPD-QC characteristic obtained in the dark with the VOX-QC characteristic representing the dielectric response is determined. The specific VSB-QC dependence surrounding the reference VFB value is obtained and the dielectric interface trap density and its spectrum is determined. A method and apparatus to quantify and separate trapped charge components is provided.
Application Number
13/345,050
Recommended Citation
Oborina, Elena I. and Hoff, Andrew, "Noncontact determination of interface trap density for semiconductor-dielectric interface structures" (2014). USF Patents. 149.
https://digitalcommons.usf.edu/usf_patents/149
Assignees
University of South Florida
Filing Date
01/06/2012
Primary/U.S. Class
324/658
