Document Type
Article
Publication Date
1984
Digital Object Identifier (DOI)
https://doi.org/10.1155/APEC.11.123
Abstract
Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina [(Al2O3)·96(MgO)·04] substrates. The temperature coefficient of resistivity (TCR) of these films has been measured for different particle size and concentration (weight percentage) of the conductor particles. The TCR was found to be a function of temperature in all the films included here. From the measured values of negative TCR the tunneling parameter α and hopping parameter β were determined. These results suggest that hopping is important for the low concentration films. For films with positive TCR only parameter α could be determined. The parameter α increased but the parameter β decreased with temperature for the present films.
Rights Information
This work is licensed under a Creative Commons Attribution 3.0 License.
Was this content written or created while at USF?
Yes
Citation / Publisher Attribution
Active and Passive Electronic Components, v. 11, art. 274825
Scholar Commons Citation
Halder, N. C. and Snyder, R. J., "Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films" (1984). Physics Faculty Publications. 80.
https://digitalcommons.usf.edu/phy_facpub/80
