Document Type
Article
Publication Date
1983
Digital Object Identifier (DOI)
https://doi.org/10.1155/APEC.11.21
Abstract
It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle-to-particle conduction, (ii) electron tunneling, and (iii) the phononassisted hopping. Equations for activation energies are derived for the temperature minimum of the resistance with and without hopping. New equations for TCR are suggested. Some extensive calculations of TCR and activation energy have been made for RuO2 thick film resistors, the results of which agree well with available experimental measurements.
Rights Information
This work is licensed under a Creative Commons Attribution 3.0 License.
Was this content written or created while at USF?
Yes
Citation / Publisher Attribution
Active and Passive Electronic Components, v. 11, art. 948943
Scholar Commons Citation
Halder, N. C., "Electron Tunneling and Hopping Possibilites in RuO2 Thick Films" (1983). Physics Faculty Publications. 78.
https://digitalcommons.usf.edu/phy_facpub/78
