Enhanced High-frequency Magneto-impedance Response of Melt-extracted Co_69.25Fe_4.25Si₁₃B_13.5 Microwires Subject to Joule Annealing

Authors

O. Thiabgoh, University of South Florida
H. Shen, University of South Florida
T. Eggers, University of South Florida
A. Galati, University of South Florida
S. Jiang, Harbin Institute of Technology
J. S. Liu, Inner Mongolia University of Technology
Z. Liu, Inner Mongolia University of Technology
J. F. Sun, Harbin Institute of Technology
Hariharan Srikanth, University of South FloridaFollow
Manh-Huong Phan, University of South FloridaFollow

Document Type

Article

Publication Date

3-2016

Keywords

Soft ferromagnetic wires, Joule annealing, Magneto-impedance, High frequency, Magnetic sensors

Digital Object Identifier (DOI)

https://doi.org/10.1016/j.jsamd.2016.04.003

Abstract

We report an enhancement of low-field, high-frequency magneto-impedance (MI) response and circumferential domain structures of melt-extracted amorphous Co_69.25Fe_4.25Si₁₃B_13.5 microwires by dc Joule annealing. The current amplitudes of 5 mA, 10 mA, and 20 mA were applied to amorphous microwires for different time treatments. The magnetic field dependence of impedance and circumferential domain structure of the microwires were explored using an impedance analyzer over a high frequency range (20 MHz–1000 MHz) and magnetic force microscopy (MFM), respectively. Consequently, the optimum value of 5 mA current for 20 min markedly improved the MI ratio up to 610% (1.7 times of 380% from the as-cast state) at a working frequency of 20 MHz. Moreover, the magnetic field sensitivity has been achieved up to 500%/Oe (more than two times of 225%/Oe from the as-cast one) at a frequency of 40 MHz. MFM images clearly show the development of a well-defined circumferential domain structure of the annealed microwire comparing with the as-cast one. The improvement of the high-frequency MI response in Co-rich amorphous microwires is promising for sensitive magnetic microsensors for low field detection.

Rights Information

This work is licensed under a Creative Commons Attribution 4.0 License.

Was this content written or created while at USF?

Yes

Citation / Publisher Attribution

Journal of Science: Advanced Materials and Devices, v. 1, issue 1, p. 69-74

Scholar Commons Citation

Thiabgoh, O.; Shen, H.; Eggers, T.; Galati, A.; Jiang, S.; Liu, J. S.; Liu, Z.; Sun, J. F.; Srikanth, Hariharan; and Phan, Manh-Huong, "Enhanced High-frequency Magneto-impedance Response of Melt-extracted Co_69.25Fe_4.25Si₁₃B_13.5 Microwires Subject to Joule Annealing" (2016). Physics Faculty Publications. 24.
https://digitalcommons.usf.edu/phy_facpub/24