Graduation Year
2008
Document Type
Thesis
Degree
M.S.M.E.
Degree Granting Department
Mechanical Engineering
Major Professor
Alex Volinsky, Ph.D.
Committee Member
Craig Lusk, Ph.D.
Committee Member
Jose Porteiro, Ph.D.
Keywords
Neutron irradiation, X-ray diffraction, Lattice parameter, Point defects, Thermal annealing
Abstract
A neutron flux on the order of 2·10²° neutrons/cm² at 0.18 MeV induces formation of point defects (vacancies and interstitials) in single crystal 3C-SiC causing a volume lattice expansion (swelling) of over 3% that can be measured by X-Ray diffraction. The crystal lattice can be completely restored with an annealing temperature equal to or higher than the irradiation temperature. This phenomenon serves as a basis for temperature measurements and allows the determination of the maximum temperature, if the exposure time is known.
The single crystal 3C-SiC sensor is applicable to small, rotating and hard to access parts due to its size of 300-500 microns, wide temperature range of 100-1450 °C, "no-lead" installation, inert chemical properties and high accuracy of temperature measurements. These features make it possible to use the sensor in gas turbine blades, automotive engines, valves, pistons, space shuttle ceramic tiles, thermal protection system design, etc.
This work describes the mechanism of neutron irradiation of single crystal 3C-SiC, the formation of point defects and their concentration, the different temperature measurement techniques, and the application of Maximum Temperature Crystal Sensors (MTCS) for maximum temperature measurements in both stationary and non-stationary regimes.
Scholar Commons Citation
Kuryachiy, Viacheslav G., "Irradiated Single Crystal 3C-SiC as a Maximum Temperature Sensor" (2008). USF Tampa Graduate Theses and Dissertations.
https://digitalcommons.usf.edu/etd/351
