Graduation Year
2004
Document Type
Thesis
Degree
M.S.E.E.
Degree Granting Department
Electrical Engineering
Major Professor
Elias K. Stefanakos, Ph.D.
Co-Major Professor
Shekhar Bhansali, Ph.D.
Committee Member
Kenneth Buckle, Ph.D.
Keywords
MIM, Rectenna, Solar energy conversion, Thin-Film Insulator, I-V Characteristics of MIM
Abstract
A Metal-Insulator-Metal (MIM) diode is a high frequency device used for energy harvesting purpose in the RECTENNA. The main objective of this thesis work is to design, fabricate and characterize a thin-film MIM diode. A key issue associated in this research work is the development MIM diode with nanometer thin insulator region. The reason for the development of MIM diode is to rectify a wide spectrum of AC signal to usable DC power. In this thesis work, a planar MIM diode with Aluminum/Aluminum-Oxide/Gold has been fabricated. The thickness of the insulator region obtained was about 3nm. The Metal and insulator depositions were done by sputtering and plasma oxidation, respectively. I-V Characteristics of the diode was measured by making use of in-house set-up and 70% of the devices on a single wafer yielded with better result. Most of the I-V curves obtained were highly non-linear and asymmetric. Based on the I-V measurement, the logarithmic derivative of I vs. V was plotted and the tunneling behavior was also observed.
Scholar Commons Citation
Krishnan, Subramanian, "Design, Fabrication and Characterization of Thin-Film M-I-M Diodes for Rectenna Array" (2004). USF Tampa Graduate Theses and Dissertations.
https://digitalcommons.usf.edu/etd/1119
