Graduation Year

2025

Document Type

Thesis

Degree

M.S.M.E.

Degree Name

MS in Mechanical Engineering (M.S.M.E.)

Degree Granting Department

Mechanical Engineering

Major Professor

Ashok Kumar, Ph.D.

Committee Member

Ajit Mujumdar, Ph.D.

Committee Member

Wilfrido Moreno, Ph.D.

Keywords

annealing, capacitance, dielectric, sputtering, thin film

Abstract

This thesis focuses on the fabrication and comprehensive characterization of thin-film capacitors utilizing zirconium dioxide (ZrO2) as the dielectric material, placed between aluminum electrodes. The research primarily aims to examine the impact of varying ZrO2 film thickness and the effects of post-deposition annealing on the structural, morphological, and electrical properties of the capacitors. A controlled sputtering deposition technique was employed to ensure uniform film growth, maintaining consistency in thickness and material quality across all samples.

A comprehensive set of characterization techniques was employed to analyze the capacitors. Scanning electron microscope (SEM) was used to assess surface roughness, revealing fewer defects and reduced charging effects in annealed samples. Atomic Force Microscopy (AFM) showed that annealing resulted in a smoother film surface. X-ray Diffraction (XRD) confirmed the crystalline phases of ZrO2, while Transmission Electron Microscopy (TEM) provided insights into interface quality and structural changes, showing improved grain alignment and reduced internal stress in annealed samples.

The electrical properties were evaluated through Capacitance-Voltage (C-V) measurements, which revealed an increase in capacitance due to annealing. This enhancement was attributed to reduced defect density, improved charge carrier mobility, and enhanced interface stability. The findings emphasize the critical role of precise thickness control and post-deposition annealing in optimizing the dielectric performance of ZrO2 thin films, demonstrating their potential for use in advanced electronic applications requiring high-performance capacitors.

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