The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136−yGey, where y indicates the number of Ge atoms present in the main framework and 136−y indicates the number of Si atoms present in the main framework, and wherein y>0.
Nolas, George S.; Witanachchi, Sarath; and Mukherjee, Pritish, "Method of manufacturing a clathrate compound" (2012). USF Patents. 335.
University of South Florida