Degree Granting Department
Martin Munoz, Ph.D.
Scattering, Optics, Nanostructure, Semiconductor, Physics
Patterns of InAs/GaAs quantum dots (QDs) grown by the combination of nanoindentation technique and molecular beam epitaxy were studied. The resulting QDs tend to preferentially nucleate on indented areas rather than other regions. We studied the strain on the indentations, regions surrounding the indents, and non-indented areas. The QD LO mode for the patterned areas shifts by 7 cm-1 when compared to the non-patterned area. The biaxial strain in the indented areas producing this shift is four times larger than that in non-indented areas, explaining the QD preferential formation within these areas. This larger strain suggests that QDs on the indentations can be formed by depositing a smaller InAs amount than that required to form QDs on non-indented areas, thus obtaining QDs only on the pattern.
Scholar Commons Citation
Hussey, Lindsay K., "Raman spectroscopy of InAs/GaAs quantum dots patterned by nano-indentation" (2007). USF Tampa Graduate Theses and Dissertations.