3C-SiC Films on Si for MEMS Applications: Mechanical Properties
Digital Object Identifier (DOI)
Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3C-SiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates were measured by means of nanoindentation using a Berkovich diamond tip. These results indicate that polycrystalline SiC thin films are attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging. MEMS cantilevers and membranes fabricated from a 2 µm thick single crystal 3C-SiC grown on (100)Si under similar conditions resulted in a small degree of bow with only 9 µm of deflection for a cantilever of 700 µm length with an estimated tensile film stress of 300 MPa. Single crystal 3C-SiC films on (111)Si substrates have the highest elastic and plastic properties, although due to high residual stress they tend to crack and delaminate.
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Citation / Publisher Attribution
Materials Science Forum, v. 615-617, p. 633-636
Scholar Commons Citation
Locke, Christopher; Kravchenko, G.; Waters, P.; Reddy, J. D.; Du, K.; Volinsky, A. A.; Frewin, Christopher L.; and Saddow, Stephen E., "3C-SiC Films on Si for MEMS Applications: Mechanical Properties" (2009). Mechanical Engineering Faculty Publications. 273.