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In this paper, the bilayer Mo films with a constant thickness were deposited by direct current and direct current (DC/DC), radio frequency and direct current mixed (RF/DC) magnetron sputtering, respectively. Changing thickness ratios of bottom layer to total thickness of bilayer film in the range from 10% to 50%, ten types of bilayer Mo thin films were deposited. The purpose is to improve the photo-conversion efficiency of Cu(In, Ga)Se2(CIGS) solar cells by changing the sputtering modes and thickness ratio. The microstructures, electrical and optical properties of the bilayer Mo thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscope (AFM), Hall Effect measurement system, ultraviolet-visible spectrophotometer (UV-vis) and four-point probe resistance system. It was found that with the increase of thickness ratios in two sputtering modes, both the crystallinity and grain size decreased, while the reflectance increased. Especially, when the thickness ratio was 40%, the resistivity of Mo film prepared in RF/DC mode was as low as 3.365 ×10-5 Ω·cm and the highest reflectance was above 60%. Using this optimized Mo thin film as electrode, the highest photo-conversion efficiency for the CIGS thin film solar cells was as high as 11.5%.

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AIP Advances, v. 8, art. 095028